Automotive SiC MOSFET Power module Features
•  Electrical features
-  V DSS = 1200 V
-  ID nom = 500A
-  New semiconductor material - Silicon Carbide
-  Low RDSon 
-  Low Switching Losses
-  Low Qg and Crss
-  Low Inductive Design <10nH
-  Tvj op = 175℃

•  Mechanical features
- 4.2 kV DC 1 sec Insulation
-  High Creepage and Clearance Distances
-  Compact design
-  High Power Density
-  Direct Cooled PinFin Base Plate
-  High Performance Si3N4 Ceramic
-  Guiding elements for PCB and cooler assembly
-  Integrated NTC temperature sensor
-  Press FIT Contact Technology
-  RoHS compliant
-  UL 94 V0 module frame

Potential applications
• Automotive Applications
• Hybrid Electrical Vehicles (H)EV
• Motor Drives
• Commercial Agriculture Vehicles